View CR04AM_1228239.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
CR04AM
OUTLINE DRAWING
5.0 MAX 4.4
Dimensions in mm
2
VOLTAGE CLASS TYPE NAME
3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
CIRCUMSCRIBE CIRCLE 0.7
1.25 1.25
1.3
12.5 MIN
1
5.0 MAX
0.63 0.4 10 0.4 0.5 0.1 6 6 0.3 0.23
132
* IT (AV) ........................................................................ 0.4A * VDRM ..............................................................400V/600V * IGT ......................................................................... 100A
JEDEC : TO-92
APPLICATION Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
V1 V1
Voltage class 8 400 500 320 400 320 12 600 720 480 600 480
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg --
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180 conduction, Ta=54C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
-40 ~ +125 -40 ~ +125
V1. With Gate-to-cathode resistance RGK=1k
Feb.1999
3.9 MAX
Unit V V V V V Unit A A A A2s W W V V A C C g
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied, RGK=1k Ta=25C, ITM=1.2A, instantaneous value Ta=25C, VD=6V, IT=0.1A V3 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V3 Tj=25C, VD=12V, RGK=1k Junction to ambient Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- 1.5 -- Max. 0.5 0.5 1.2 0.8 -- 100 V2 3 150 Unit mA mA V V V A mA C/W
V2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100
The above values do not include the current flowing through the 1k resistance between the gate and cathode.
V3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60
V1 RGK 12 VGT 1k SWITCH
SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1k)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0 1 2 3 4 5 RATED SURGE ON-STATE CURRENT 10
SURGE ON-STATE CURRENT (A)
9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
GATE CHARACTERISTICS 102
7 5 3 2
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
VFGM = 6V PGM = 0.5W
GATE VOLTAGE (V)
7 5 VGT = 0.8V 3 2 (Tj = 25C) 7 5 3 2 7 5 3 2
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
101
103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)
100
PG(AV) = 0.1W IGT = 100A (Tj = 25C) IFGM = 0.3V
10-1
VGD = 0.2V
10-2 10-2 2 3 5710-12 3 57100 2 3 57101 2 3 57102 2 3 GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0
GATE TRIGGER VOLTAGE (V)
0.9 0.8 0.7 0.6
0.5 0.4 0.3
0.2 0.1
,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,,
DISTRIBUTION TYPICAL EXAMPLE 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (C)
TRANSIENT THERMAL IMPEDANCE (C/W)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s)
0 -40 -20
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 60 120 = 30 90 0.7 180 0.6 0.5 0.4 0.3 0.2 0.1 0 0 360 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 90 60 120 360 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 180
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 = 30 90 60 120 0.7 180 0.6 0.5 0.4 0.3 0.2 0.1 0 0
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 20 0 0 = 30 60 90 120 180
360 RESISTIVE LOADS NATURAL CONVECTION
360 RESISTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 90 180 0.7 = 30 60 120 270 DC 0.6 0.5 0.4 0.3 0.2 0.1 0 0 360 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 = 30 0 60 120 270 90 180 360 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION
DC
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE
100 (%)
100 (%)
160 140 120 100 80 60 40 20
TYPICAL EXAMPLE
120 100
TYPICAL EXAMPLE
BREAKOVER VOLTAGE (RGK = rk) BREAKOVER VOLTAGE (RGK = 1k)
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
80 60 40 20 Tj = 125C 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k)
RGK = 1k 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C RGK = 1k 140
100 (%)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25C) = 35A 3 2 100 7 5 3 2 10-1 7 5 3 2 RGK = 1k 10-2 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,,
HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE
100 (%)
HOLDING CURRENT VS. GATE TRIGGER CURRENT 4.0
HOLDING CURRENT (mA)
500 TYPICAL EXAMPLE IGT (25C) IH (1k) # 1 25A 0.9mA
Tj = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5
400
HOLDING CURRENT (RGK = rk) HOLDING CURRENT (RGK = 1k)
300
200 #1 100 Tj = 25C
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k)
0 100
101 GATE TRIGGER CURRENT (A)
102
TURN-ON TIME VS. GATE CURRENT 102 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) VD = 100V RL = 47 RGK = 1k Ta = 25C 40 35
TURN-OFF TIME (s)
TURN-OFF TIME VS. JUNCTION TEMPERATURE VD = 50V, VR = 50V IT = 2A, RGK = 1k TYPICAL EXAMPLE
TURN-ON TIME (s)
30
25 DISTRIBUTION 20 15 10 5 0
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
0 20 40 60
80 100 120 140 160
JUNCTION TEMPERATURE (C)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 #1 #2 TYPICAL EXAMPLE IGT (DC) # 1 10A # 2 65A
REPETITIVE PEAK REVERSE VOLTAGE (Tj = tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25C)
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
Tj = 25C 101 100 2 3 4 5 7 101
2
3 4 5 7 102
GATE CURRENT PULSE WIDTH (s)
Feb.1999

▲Up To Search▲

Price & Availability of CR04AM

	To Download CR04AM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .